The nanotech research facility at PSGIAS consists of state-of-art equipments for nano material synthesis, characterization and fabrication. Advanced high tech infrastructure and instruments for research in the field of nanoscience and nano technology are situated at various laboratories.
The JEOL JEM 2100 High Resolution Transmission Electron Microscope (HRTEM) provides one of the best-in-class solutions to problems in diverse fields ranging from Materials Science to Biology. This microscope enables to view lattice resolution of 0.14 nm and point-to-point resolution of 0.19 nm with the following features
- Electron Source : LaB6.
- Working Voltage : 200 kV and 80 kV.
- CCD Camera : Gatan Orius SC200 (Resolution 2K x 2K).
- Detectors : EDS (Oxford Inca X-Sight
- Imaging Scale : 1μm, 500nm, 200nm, 100nm, 50nm, 20nm, 10nm, 5nm and 2nm.
- Bright Field (BF) and Dark Field (DF) imaging,
- High Resolution Electron Microscopy (HREM),
- Selected Area Electron Diffraction (SAED),
- Energy Dispersive X-ray Spectroscopy (EDS),
- Nano Beam Diffraction (NBD),
- Convergent Beam Electron Diffraction (CBED).
TEM Specimen Preparation Facility
The HRTEM facility has a full range of Gatan sample preparation equipments for TEM specimen preparation in addition to the basic facilities such as carbon and/or formware coated copper grids.
Minitom low speed diamond saw
To slice the sample up to 500 micron
Ultrasonic disc cutter
To make 3mm diameter discs from brittle samples
The instrument is capable of performing multimode operations especially for analyzing surface characteristics with high precision and resolution. It is possible to carry out experiments in air, vacuum as well as in liquids in controlled environment. The added new generation electronics provides operations even in high-frequency modes.
AFM Imaging: Contact / Semi contact mode
In air and vacuum
- Scanning Tunneling Microscopy (STM)
- Lateral Force Microscopy (LFM)
- Phase Imaging, Force Modulation
- Magnetic Force Microscopy (MFM)
- Electrostatic Force Microscopy (EFM)
- Spreading Resistance Imaging (SRI)
- Scanning Capacitance Imaging (SCI)
- Scanning Kelvin Probe Microscopy (SKM)
- Heating Stage Operations
- Adhesion Force Imaging
- AFM Nanolithography
- Nanosclerometry with AFM-Nanoindentation
- Contact AFM/LFM/Adhesion Force Imaging/Force Modulation, Phase Imaging
- AFM Nanolithography
- Electrochemical AFM/STM Imaging
Bench-top Scanning Probe Microscope AFM/STM (Nanosurf)
Hall Effect Measurement Systems plot concentration versus temperature, mobility versus temperature, resistivity versus temperature, conductivity versus temperature, and Hall coefficient versus temperature. The HMS3000 & temperature controller HT55T5 includes software with I-V curve capability for checking the ohmic integrity of the user made sample contacts. The systems ramp to each user defined temperature, stabilize, makes the measurement and then plots the various temperature dependent material electrical properties.
Instrument : HMS 3000 from Ecopia Corp, South Korea with high temperature sample stage HT55T5 with a magnetic field of 0.5Tesla
- Low and high resistivity measurement capability, bulk and sheet carrier concentration and mobility, Hall coefficient in semiconductors
- DC measurement modes
- van der Pauw and Hall measurements
- Measurement from room temperature to 673K
Nanotech research innovation and incubation centre at PSGIAS has commissioned Keysight B1500A parametric analyzer with Cascade EPS150 Triax EDU probe station for device characterization.
- 4 Mid power source monitor unit.
- Capacitance measurement unit.
- CMOS Transistor: Id-Vg, Id-Vd, Vth, breakdown, capacitance, QSCV, etc.
- Bipolar Transistor: Ic-Vc, diode, Gummel plot, breakdown, hfe, capacitance, etc.
- Discrete device: Id-Vg, Id-Vd, Ic-Vc, diode, etc.
- Memory: Vth, capacitance, endurance test, etc.
- Power device: Pulsed Id-Vg, pulsed Id-Vd, breakdown, etc.
- Nano Device: Resistance, Id-Vg, Id-Vd, Ic-Vc, etc.
- Reliability test: NBTI/PBTI, charge pumping, electro migra-tion, hot carrier injection, J-Ramp, TDDB, etc.
- Current-voltage (IV) measurement capabilities of spot, sweep, sampling and pulse measurement in the range of 0.1 fA – 1 A / 0.5 μV – 200 V
- AC capacitance measurement in multi frequency from 1 kHz to 5 MHz and Quasi-Static Capacitance-Voltage (QS-CV) measurement capabilities
- Advanced pulsed IV and ultra-fast IV measurement capability from minimum 5 ns sampling interval (200 MSa/s)
- Up to 40 V high voltage pulse forcing for non-volatile memory evaluation
- 15-inch wide touch screen supports intuitive GUI opera-tion of the EasyEXPERT group+
- Windows Embedded Standard 7 (WES7)
- GPIB, USB, LAN interfaces, and VGA video output port
- Multi-frequency AC impedance measurement supports CV (capacitance versus voltage), C-t (capacitance versus time) and C-f (capacitance versus frequency)measurement
- Capacitance measurement frequency range of 1 kHz to 5 MHz
- 150 mm manual probing solution for low-noise measurements
- 4 probes with industrial standard positioners
- 100X magnification microscope with camera output
- Supports single chip and wafers
TGA : mass changes, temperature stability, oxidation/reduction behavior, decomposition, corrosion studies, compositional analysis and thermokinetics.
DSC : melting/crystallization behavior, solid-solid transitions, polymorphism, degree of crystallinity, glass transitions, cross-linking reactions, oxidative stability, purity determination, specific heat and thermokinetics
Simultaneous Thermal Analysis generally refers to the simultaneous application of Thermogravimetry (TGA) and Differential Scanning Calorimetry (DSC) to one and the same sample in a single instrument.The advantages of the instrument are: The test conditions are perfectly identical for the TGA and DSC signals (same atmosphere, gas flow rate, vapor pressure on the sample, heating rate, thermal contact to the sample crucible and sensor, radiation effect, etc.).
Instrument : STA449 F3 Jupiter from Netzsch, Germany
Sample quantity : 5 mg
Atmosphere : Nitrogen, Air, Argon
Heat ramp :20 K/min
Temperature :Upto 773 K (Aluminium crucible), 1473 K (Alumina crucible)
ZEM3 M10 simultaneous Seebeck and electrical resistivity measurement system:
Contact : Dr. Anuradha M Ashok – firstname.lastname@example.org ,
ZEM 3 M10 is capable of carrying out simultaneous measurements of Seebeck coefficient and electrical resistivity of thermoelectric materials with high reproducibility. It can measure a wide range of samples including semiconductors, oxides and metals at a temperature range between 50 oC to 1000 oC.
The sample holder uses a unique balance contact mechanism, permitting measurement of high reproducibility. V-I plot measurement can be made to judge if the lead is in intimate contact with a set sample. The system automatically examines whether the contact of the probes with a sample ohmic or not, and finds and uses the best value of electric current to determine the resistivity of the sample without influence of heat transfer.Measurement is controlled by a computer, permitting automatic measurement with each temperature difference at a specified temperature and elimination of dark electromotive force.
Measurement technique Seebeck Coefficient: Static DC method
Electric Resistance: Four- Probe method
The MicroWriter ML® is photolithography machine designed for rapid prototyping and small volume manufacturing in R&D laboratories and clean rooms. MicroWriter ML®3 is is a compact, high-performance, direct-write optical lithography machine .
The machine is placed in yellow class 1000 clean-room.
Key features and specifications:
- 195mm x 195mm maximum writing area.
- 230mm x 230mm x 15mm maximum wafer size.
- 0.6µm, 1µm, 2µm and 5µm resolutions across full writing area.
- Automatic selection of resolution via software – no manual changing of lens required.
- 385nm long-life semiconductor light source, suitable for broadband, g-, h- and i-line positive and negative photoresists (e.g. S1800, ECI-3000, MiR 701, SU-8).
- XY interferometer for precise motion control. Extremely fast writing speed – up to: 20mm2/minute (0.6µm resolution), 50mm2/minute (1µm resolution), 100mm2/minute (2µm resolution) and 180mm2/minute (5µm resolution). These allow a typical 50mm x 50mm area combining critical and non-critical areas to be exposed in under 30 minutes or a typical 100mm x 100mm area to be exposed at 2µm resolution in under 2 hours.
- Autofocus system using yellow light which automatically tracks surface height variation during exposure, compensating for bowed or inclined substrates and surfaces with highly irregular topography. No minimum wafer size. High quality infinite conjugate optical microscope camera with x3 aspheric objective lens and x5, x10 and x20 Olympus plan achromatic objective lens and yellow light illumination for alignment to lithographic markers on the wafer (±0.5µm 3σ alignment accuracy).
- Automatic changing between microscope magnifications via software – no manual changing of lens required. Additional x4 digital zoom can be selected in software. Grey scale exposure mode for 3-dimensional patterning (255 grey levels).
- Software API for external interfacing and control.
- 100nm minimum addressable grid; 20nm sample stage resolution.