Professional Brief
Professional Experience
Postdoctoral Research Associate, Organic Device Physics Laboratory, Department of Physics, Pukyong National University, Busan, South Korea
Senior Researcher, Yonsei Institute of Convergence Technology, Yonsei University, Incheon, South Korea
Postdoctoral Researcher, Department of Materials Science, CENIMAT-I3N and CEMOP- UNINOVA, FCT-UN, Caparica, Portugal
Area of Interest
- Amorphous metal oxides
- Thin-film transistor
- Solar cells
- Photo-catalysis
Sponsored Research Projects
| S. No | Title of the project | Role (PI / Co-PI) | Funding agency and year of sanction | Budget Lakhs | Duration and status |
|---|---|---|---|---|---|
| 1 | Amorphous metal oxide semiconductor thin-film transistor fabrication via solution process and photochemical activation techniques for flexible electronics applications | PI | DST-SERB (2016) | 40.25 | 3 years (Completed) |
| 2 | Development of thermoelectric module using doped and nanostructured ZnO based materials for energy generation | Co-PI | DST SERB (2018) | 50.80 | 3 Years and on-going |
| 3 | Development of Amorphous Tin Oxide based Active Channel Layers and Fabrication of a High Mobility Transistor with Stable Operation | PI | DST-SERB (2020) | 71.70 | 3 years (On-going) |
| 4 | Highly transparent and conducting flexible films for aircraft canopy applications | PI | AR&DB (2020) | 18.15 | 2 Years (On-going) |
| 5 | Carrier‐selective metal oxide interdigitated back contacts for c-Si Solar Cell | PI | IITB-PUMP | – | On-going |
Publications
Selected peer-reviewed publications
A review on the recent advancements in tin oxide-based thin-film transistors for large-area electronics
S. Parthiban, K. Jenifer, S. Arulkumar and J. Y. Kwon
Journal of Electronic Materials 49 (2020) 5606
Environmentally stable, solution processed indium boron zinc oxide thin-film transistors
S. Parthiban S. Arulkumar, G. Dharmalingam, Bindu Salim and J. Y. Kwon
Journal of Electronic Materials Accepted, DOI: 10.1007/s11664-020-08531-x
Rapid and scalable wire-bar strategy for coating of tio2 thin-films: effect of post annealing temperatures on structures and catalytic dye-degradation
S. Parthiban P. Divya, S. Arulkumar, Anandarup Goswami, TansirAhamad, and Manoj B. Gawande
Molecules 25 (2020)1683.
Quantification of ethanol by metal-oxide-based resistivesensors: A review
S. Parthiban G. Dharmalingam, R. Sivasubramaniam
Journal of Electronic Materials 49 (2020) 3009
Amorphous boron–indium–zinc-oxide active channel layers for thin-film transistor fabrication
S. Parthiban, J. Y.Kwon
Journal of Materials Chemistry | 2015 | C 3 1661-1665, DOI: 10.1039/C4TC01831A
Selective Area Growth of Bernal Bilayer Epitaxial Graphene on 4H-SiC (0001) Substrate by Electron-Beam Irradiation
S. Parthiban, P. Dharmaraj, K. Jeganathan, J. Y. Kwon, S. Gautam, K. H. Chae, K. Asokan
Applied Physics Letter | 2014 | 105, 181601, DOI: 10.1063/1.4901074
Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors
S. Parthiban, S. H. Kim, J. Y. Kwon
IEEE- Electron Device Letter | 2014 | 35, 1028-1030, DOI:10.1109/LED.2014.2345740
Role of dopants as carrier suppressor and strong binder in amorphous indium based thin-film transistor (Review Paper)
S. Parthiban, J. Y. Kwon
Journal of Materials Research | 2014 | 29, 1-13, DOI:10.1557/jmr.2014.187.
Effects of post-annealing temperature on carbon -incorporated amorphous indium–zinc-oxide thin film transistor fabrication using sputtering at room temperature
S. Parthiban, J. Y. Kwon
RSC Advances| 2014 | 4, 21958, DOI: 10.1039/C4RA01782J
Performance of microcrytaline zinc tin oxide thin-film transistors processed by spray pyrolysis
S. Parthiban, E. Elangovan, K. J. Saji, P. K. Nayak, A. Goncalves, D. Nunes L. Pereira, P.Barquinha, T. Busani, E. Fortunato, R. Martins
IEEE –Journal of Display Tech| 2013 | 99, 1, DOI:10.1109/JDT.2013.2262096
Effect of Li3+ heavy ion irradiation on the Mo doped In2O3 thin films prepared by spray pyrolysis technique
S. Parthiban, E. Elangovan, K. Ramamurthi, D. Kanjilal, K. Asokan, R. Martins, E. Fortunato
Journal of Physics D: Applied Physics| 2011 | 44, 085404, DOI:10.1088/0022- 3727/44/8/085404
Investigations of high near infra-red transparency and carrier mobility Mo doped In2O3 thin films prepared by spray pyrolysis technique
S. Parthiban, E. Elangovan, K .Ramamurthi, R. Martins , E. Fortunato
Solar Energy Materials & Solar Cells| 2010 | 94, 406, DOI: 10.1016/j.solmat.2009.10.017
High near infra-red transparency and carrier mobility of Mo doped In2O3 thin films for optoelectronics applications
S. Parthiban, E. Elangovan, K .Ramamurthi, R. Martins, E. Fortunato
Journal of Applied Physics | 2009 | 106, 063716, DOI.org/10.1063/1.3224946
Spray deposited molybdenum doped indium oxide thin films with high near infra-red transparency and carrier mobility thin films
S. Parthiban, K .Ramamurthi, E. Elangovan, R. Martins, E. Fortunato
Applied Physics Letters | 2009 | 94, 212101, DOI.org/10.1063/1.3142424
High near infrared transparent molybdenum doped indium oxide thin films for nano-crystalline silicon solar cell applications
S. Parthiban, V. Gokulakrishnan, K. Ramamurthi, E. Elangovan, R. Martins, E.Fortunato, R. Ganesan
Solar Energy Materials & Solar Cells | 2009 | 93, 92, DOI: 10.1016/j.solmat.2008.08.007
Rapid and scalable wire-bar strategy for coating of tio2 thin-films:
S. Parthiban, P. Divya, S. Arulkumar, Anandarup Goswami, Tansir Ahamad, and Manoj B. Gawande
Effect of post annealing temperatures on structures and catalytic dye-degradation, Molecules. 25 (2020)1683. IF.3.02
Quantification of Ethanol by metal-oxide-based resistivesensors:
G. Dharmalingam, R. Sivasubramaniam, S. Parthiban
A review, Journal of Electronic Materials 49 (2020) 3009. IF-1.676
Solution processed boron doped indium oxide thin-film as channel layer in thin-film transistors, Journal of Materials Science:
S. ParthibanS. Arulkumar, D. Gnanaprakash, J. Y. Kwon
Materials in Electronics 30 (2019) 18696-18701. IF-2.195
Low temperature processed titanium oxide thin-film using scalable wire-bar coating
S. Arulkumar, S. Parthiban, Anandarup Goswami, Rajender S. Varma, Mu Nasushad and Manoj B. Gawande
Materials Research Express 6 (2019) 126427. IF-1.449
Research Scholars
Oxide Thin-film and Device Laboratory Students
 |
Mr. S. Arulkumar, M. Tech, Designation : Research Fellow Area of Research: Amorphous metal oxide thin-film transistor and circuit fabrication |
 |
Ms. K. Jenifer, M. Sc Designation : Junior Research Fellow AR&DB, India Area of Research : Transparent conducting thin-film coatings and flexible electrode fabrication |
 |
Ms.Riza Paul, M. Sc. Designation : Research Fellow Area of Research : Zinc oxide based transparent conducting oxide thin-film development |
 |
Mr. K. Shyaam, M. Sc Designation : Junior Research Fellow, DST-CRG, India Area of Research : Amorphous tin oxide based thin-film transistor and circuit fabrication |
